electrical characteristics (at t a =25c unless otherwise noted) pa ra m et er sy m bo l un it repetitive peak reverse voltage continuous reverse voltage rms voltage maximum forward rectified current maximum forward voltage @ i f =1.0a maximum reverse t j =25c reverse v oltage: 20 to 200 v olts forward current: 1.0 amp rohs device d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) cdbmts120-hf thru. cdbmts1200-hf page 1 qw -jb029 low profile smd schottky barrier rectifiers rev : a comchip t echnology co., l td. sod-123s v rrm v r v rms i o v f i fsm i r c j t j cdbmts 120-hf cdbmts 140-hf cdbmts 160-hf cdbmts 180-hf cdbmts 1 100-hf 20 20 14 40 40 28 60 60 42 1.0 0.70 30 0.5 10 80 80 56 100 100 70 v v v a v a ma c 0.50 0.92 operating temperature storage temperature range t stg -65 to +175 c -55 to +125 -55 to +150 120 p f cdbmts 130-hf 30 30 21 cdbmts 150-hf 50 50 35 t ypical diode junction capacitance (f=1mhz and applied 4v dc reverse voltage) t j =100c features mechanical data -case: molded plastic, sod-123s/mini sma -t erminals: solderable per mil-std-750, method 2026. -polarity: indicated by cathode band. -w eight: 0.0155 grams approx. -mounting position: any -epoxy: ul94-v0 rated flame retardant. halogen free -low power loss,high ef ficiency . -high current capability ,low forward voltage drop. -high surge capability . -guarding for overvoltage protection. -ultra high-speed switching. -low profile package is 40% thinner than standards sod-123. -silicon epitaxial planar chip,metal silicon junction. -lead-free part meets environmental standards of mil-std-19500/228 cdbmts 1 150-hf 150 105 150 cdbmts 1200-hf 200 140 200 ma forward surge current ximum 8.3ms single half sine-wave superimposed on rated load (jedec methode) current (v r =v rrm) 0.85 better reverse -excellent power dissipation of fers leakage current and thermal resistance. 0.154(3.9) 0.138(3.5) 0.018(0.45) t yp. 0.079(2.0) 0.063(1.6) 0.041(1.05) 0.033(0.85) 0.032(0.8) t yp. 0.032(0.8) t yp. 0.037(0.95) 0.029(0.75) 0.1 19(3.0) 0.103(2.6) 0.009(0.22) 0.007(0.18) c o m c h i p s m d d i o d e s p e c i a l i s t
page 2 qw -jb029 rev : a comchip t echnology co., l td. rating and characteristic curves (cdbmts120-hf thru. cdbmts1200-hf) fig.2 - t ypical forward characteristics i f , i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) forward v oltage, (v) v f , 0 . 1 fig.5 - t ypical reverse characteristics r e v e r s e l e a k a g e c u r r e n t , ( m a ) percent of rated peak reverse v oltage, (%) 0 1 2 0 2 0 0 fig.4 - t ypical junction capacitance 0 c j , j u n c t i o n c a p a c i t a n c e , ( p f ) v r , reverse v oltage, (v) 1 5 0 3 5 0 0 . 0 1 1 0 . 0 1 1 0 1 0 0 1 . 5 1 0 0 fig.1- t ypical forward current 0 i o , a v e r a g e f o r w a r d c u r r e n t , ( a ) t a , ambient t emperature, (c) 1 . 6 1 . 2 0 . 1 2 0 1 6 0 1 0 0 0 . 0 1 1 1 0 1 0 0 0 . 1 0 . 3 0 . 4 0 . 9 1 . 1 5 0 2 0 0 3 0 0 0 . 8 4 0 8 0 1 6 0 1 6 0 1 2 0 2 . 0 2 . 4 o t j =75 c o t j =25 c 0 . 5 0 . 1 1 0 1 0 0 2 5 0 1 4 0 4 0 8 0 fig.3 - maximum non-repetitive forward surge current 0 p e a k f o r w a r d s u r g e c u r r e n t , ( a ) i f s m , number of cycles at 60hz 3 0 1 1 0 1 0 0 2 0 1 0 o t j =25 c 8.3ms single half sine wave, jedec method c d b m s 1 5 0 - h f ~ c d b m s 1 2 0 0 - h f c d b m s 1 2 0 - h f ~ c d b m s 1 4 0 - h f t j =25c pulse width 300 us 1% duty cycle 0 . 7 1 . 3 c d b m t s 1 2 0 - h f ~ c d b m t 1 4 0 - h f c d b m t s 1 8 0 - h f ~ m d b m t s 1 1 0 0 - h f - c d b m t s 1 1 5 0 - h f ~ m d b m t s 1 2 0 0 - m s derating curve low profile smd schottky barrier rectifiers c d b m t s 1 5 0 - h f ~ c d b m t s 1 6 0 - h f c o m c h i p s m d d i o d e s p e c i a l i s t
page 3 rev : a comchip t echnology co., l td. o 1 2 0 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start d 1 d 2 d w 1 t c direction of feed reel t aping specification qw -jb029 b c d d d 2 d 1 s o d - 1 2 3 s s y m b o l a ( m m ) ( i n c h ) 2 . 4 4 0 m i n . 4 . 0 0 0 . 1 0 1 . 5 0 0 . 1 0 6 2 . 0 m i n . 1 3 . 0 0 . 5 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 8 . 0 0 0 . 3 0 1 1 . 4 0 1 . 0 1 7 8 2 . 0 0 0 . 0 5 9 0 . 0 0 4 7 . 0 0 0 . 0 7 9 0 . 5 1 2 0 . 0 2 0 s y m b o l ( m m ) ( i n c h ) 0 . 1 5 7 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 0 . 4 4 9 0 . 0 3 9 e f p p 0 p 1 w w 1 1 . 7 5 0 . 1 0 0 . 0 6 9 0 . 0 0 4 3 . 5 0 0 . 1 0 0 . 1 3 8 0 . 0 0 4 s o d - 1 2 3 s 2 . 0 0 0 . 1 0 0 . 0 7 9 0 . 0 0 4 3 . 8 5 0 . 1 0 0 . 1 5 2 0 . 0 0 4 1 . 1 0 0 . 1 0 0 . 0 4 3 0 . 0 0 4 0 . 2 3 0 . 1 0 t 0 . 0 0 9 0 . 0 0 4 0 . 3 1 5 0 . 0 1 2 low profile smd schottky barrier rectifiers i n d e x h o l e d e f b w p p 0 p 1 a c o m c h i p s m d d i o d e s p e c i a l i s t
part number 12 marking code marking code cdbmts120-hf xx page 4 rev : a comchip t echnology co., l td. qw -jb029 cdbmts140-hf cdbmts160-hf cdbmts180-hf 14 16 18 cdbmts150-hf 15 cdbmts130-hf 13 cdbmts1 100-hf 10 xx / xxx = product type marking code suggested p ad layout size (inch) 0.1 18 (mm) 3.00 1.00 0.90 0.039 0.036 4.00 0.157 e 2.00 0.079 b c d a c a e d b sod-123s pinning information pin simplified outline symbol 1 2 pin 1 cathode pin 2 anode 2 1 low profile smd schottky barrier rectifiers standard packaging cdbmts1 150-hf 1 15 cdbmts1200-hf 120 c a s e t y p e s o d - 1 2 3 s 2 , 5 0 0 r e e l ( p c s ) reel size (inch) 7 r e e l p a c k c o m c h i p s m d d i o d e s p e c i a l i s t
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